SAMSUNG 990 Evo Plus 1 TB NVMe SSD - Read Speed up to 7250 MB/s, Write Speed to up 6300 MB/s, Random Read up to 1000000 IOPS, Random Write up to 1350000 IOPS, PCIe® 4.0 x4 / 5.0 x2 NVMe 2.0, V-NAND TLC; In-house controller; HMB(Host Memory Buffer)
SAMSUNG 990 Evo Plus 2 TB NVMe SSD - Read Speed up to 7250 MB/s Write Speed to up 6300 MB/s Random Read up to 1000000 IOPS Random Write up to 1350000 IOPS PCIe® 4.0 x4 / 5.0 x2 NVMe 2.0 V-NAND TLC/ In-house controller/ HMB(Host Memory Buffer)
SAMSUNG 990 Evo Plus 2 TB NVMe SSD - Read Speed up to 7250 MB/s, Write Speed to up 6300 MB/s, Random Read up to 1000000 IOPS, Random Write up to 1350000 IOPS, PCIe® 4.0 x4 / 5.0 x2 NVMe 2.0, V-NAND TLC; In-house controller; HMB(Host Memory Buffer)
SAMSUNG 990 Evo Plus 4 TB NVMe SSD - Read Speed up to 7250 MB/s Write Speed to up 6300 MB/s Random Read up to 1000000 IOPS Random Write up to 1350000 IOPS PCIe® 4.0 x4 / 5.0 x2 NVMe 2.0 V-NAND TLC/ In-house controller/ HMB(Host Memory Buffer)
SAMSUNG 990 Evo Plus 4 TB NVMe SSD - Read Speed up to 7250 MB/s, Write Speed to up 6300 MB/s, Random Read up to 1000000 IOPS, Random Write up to 1350000 IOPS, PCIe® 4.0 x4 / 5.0 x2 NVMe 2.0, V-NAND TLC; In-house controller; HMB(Host Memory Buffer)
SAMSUNG 990 PRO 1 TB NVMe SSD - Read Speed up to 7450 MB/s, Write Speed to up 6900 MB/s, Random Read up to 1200000 IOPS, Random Write up to 1550000 IOPS;PCIe 4.0 x4, NVMe 2.0; V-Nand 3bit MLC; In-house controller; 1GB Low Power DDR4, 600TBW
SAMSUNG 990 PRO 1 TB NVMe SSD W/Heatsink - Read Speed up to 7450 MB/s Write Speed to up 6900 MB/s Random Read up to 1200000 IOPS Random Write up to 1550000 IOPS/PCIe 4.0 x4 NVMe 2.0/ V-Nand 3bit MLC/ In-house controller/ 1GB Low Power DDR4 600TBW
SAMSUNG 990 PRO 2 TB NVME SSD - READ SPEED UP TO 7450 MB/S WRITE SPEED TO UP 6900 MB/S RANDOM READ UP TO 1400000 IOPS RANDOM WRITE UP TO 1550000 IOPS/PCIE 4.0 X4 NVME 2.0/ V-NAND 3BIT MLC/ IN-HOUSE CONTROLLER/ 2GB LOW POWER DDR4 1200TBW
SAMSUNG 990 PRO 2 TB NVME SSD - READ SPEED UP TO 7450 MB/S, WRITE SPEED TO UP 6900 MB/S, RANDOM READ UP TO 1400000 IOPS, RANDOM WRITE UP TO 1550000 IOPS;PCIE 4.0 X4, NVME 2.0; V-NAND 3BIT MLC; IN-HOUSE CONTROLLER; 2GB LOW POWER DDR4, 1200TBW
SAMSUNG 990 PRO 2 TB NVMe SSD W/Heatsink - Read Speed up to 7450 MB/s Write Speed to up 6900 MB/s Random Read up to 1400000 IOPS Random Write up to 1550000 IOPS/PCIe 4.0 x4 NVMe 2.0/ V-Nand 3bit MLC/ In-house controller/ 2GB Low Power DDR4 1200TBW
SAMSUNG 990 PRO 4 TB NVME SSD - READ SPEED UP TO 7450 MB/S WRITE SPEED TO UP 6900 MB/S RANDOM READ UP TO 1400000 IOPS RANDOM WRITE UP TO 1550000 IOPS/PCIE 4.0 X4 NVME 2.0/ V-NAND 3BIT MLC/ IN-HOUSE CONTROLLER/ 2GB LOW POWER DDR4 1200TBW
SAMSUNG 990 PRO 4 TB NVME SSD - READ SPEED UP TO 7450 MB/S, WRITE SPEED TO UP 6900 MB/S, RANDOM READ UP TO 1400000 IOPS, RANDOM WRITE UP TO 1550000 IOPS;PCIE 4.0 X4, NVME 2.0; V-NAND 3BIT MLC; IN-HOUSE CONTROLLER; 2GB LOW POWER DDR4, 1200TBW
SAMSUNG 990 PRO 4 TB NVME SSD - W/HEATSINK READ SPEED UP TO 7450 MB/S WRITE SPEED TO UP 6900 MB/S RANDOM READ UP TO 1400000 IOPS RANDOM WRITE UP TO 1550000 IOPS/PCIE 4.0 X4 NVME 2.0/ V-NAND 3BIT MLC/ IN-HOUSE CONTROLLER/ 2GB LOW POWER DDR4 1200TBW
SAMSUNG 990 PRO 4 TB NVME SSD - W/HEATSINK READ SPEED UP TO 7450 MB/S, WRITE SPEED TO UP 6900 MB/S, RANDOM READ UP TO 1400000 IOPS, RANDOM WRITE UP TO 1550000 IOPS;PCIE 4.0 X4, NVME 2.0; V-NAND 3BIT MLC; IN-HOUSE CONTROLLER; 2GB LOW POWER DDR4, 1200TBW